Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2007-11-16
2010-06-22
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S471000, C257S483000, C438S167000, C438S576000
Reexamination Certificate
active
07741693
ABSTRACT:
Trenches are formed in a semiconductor substrate, where the trenches include an outer trench and multiple inner trenches within the outer trench. A metal-oxide semiconductor (MOS) device and a trench MOS Schottky barrier (TMBS) device are also formed in the semiconductor substrate using the trenches. The MOS device could include the outer trench, and the TMBS device could include the inner trenches. At least one of the inner trenches may contact the outer trench, and/or at least one of the inner trenches may be electrically isolated from the outer trench. The MOS device could represent a trench vertical double-diffused metal-oxide semiconductor (VDMOS) device, and the TMBS device may be monolithically integrated with the trench VDMOS device in the semiconductor substrate. A guard ring that covers portions of the inner trenches and that is open over other portions of the inner trenches could optionally be formed in the semiconductor substrate.
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Fernandes Errol
National Semiconductor Corporation
Pham Thanh V
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