Method for integrating thermistor

Details Method for integrating thermistor Method for integrating thermistor

2006-07-18

2006-07-18

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Thermally responsive

C438S381000

Reexamination Certificate

active

07078259

ABSTRACT:
A structure and method are provided for forming a thermistor. Isolation structures are formed in a substrate including at least an upper layer of a single crystal semiconductor. A layer of salicide precursor is deposited over the isolation region and the upper layer. The salicide precursor is then reacted with the upper layer to form a salicide self-aligned to the upper layer. Finally, the unreacted portions of the salicide precursor are then removed while preserving a portion of the salicide precursor over the isolation region as a body of the thermistor. An alternative integrated circuit thermistor is formed from a region of thermistor material in an embossed region of an interlevel dielectric (ILD).

REFERENCES:
patent: 4821062 (1989-04-01), Katoh et al.
patent: 5847436 (1998-12-01), Iwata
patent: 5975485 (1999-11-01), Tsai et al.
patent: 6002132 (1999-12-01), Mooney et al.
patent: 6191420 (2001-02-01), Souma
patent: 6297135 (2001-10-01), Talwar et al.
patent: 6329262 (2001-12-01), Fukuda et al.
patent: 6388296 (2002-05-01), Hsu
patent: 6717147 (2004-04-01), Oda
patent: 2005/0110108 (2005-05-01), Patel et al.

Affiliated with

Also associated with

Rating

Method for integrating thermistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for integrating thermistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integrating thermistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3563866