Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-06-13
2006-06-13
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S494000
Reexamination Certificate
active
07060516
ABSTRACT:
A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.
REFERENCES:
patent: 3400309 (1968-09-01), Doo
patent: 3574008 (1971-04-01), Rice
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4948751 (1990-08-01), Okamoto et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5728215 (1998-03-01), Itagaki et al.
patent: 6174748 (2001-01-01), Jeon et al.
patent: 6406982 (2002-06-01), Urakami et al.
patent: 6495294 (2002-12-01), Yamauchi et al.
Betty Ian B.
Glew Rick W.
Greenspan Jonathan
Bookham Technology PLC
Lahive & Cockfield LLP
Laurentano, Esq. Anthony A.
Smoot Stephen W.
LandOfFree
Method for integrating optical devices in a single epitaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for integrating optical devices in a single epitaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integrating optical devices in a single epitaxial... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3638949