Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Patent
1997-11-19
1999-10-05
Trinh, Michael
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
438 50, 438 53, 148DIG105, H01L 2100
Patent
active
059637889
ABSTRACT:
A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.
REFERENCES:
patent: 4562092 (1985-12-01), Wiech
patent: 4859629 (1989-08-01), Reardon
patent: 5095401 (1992-03-01), Zayracky
patent: 5227335 (1993-07-01), Holschwander et al.
patent: 5242839 (1993-09-01), Oh
patent: 5260596 (1993-11-01), Dunn
patent: 5314572 (1994-05-01), Core
patent: 5326726 (1994-07-01), Tsang
patent: 5345824 (1994-09-01), Sherman
patent: 5399415 (1995-03-01), Chen
patent: 5412265 (1995-05-01), Sickafus
patent: 5417111 (1995-05-01), Sherman
patent: 5427975 (1995-06-01), Sparks
patent: 5431051 (1995-07-01), Biebl
patent: 5431057 (1995-07-01), Zimmer
patent: 5455203 (1995-10-01), Koseki
patent: 5493177 (1996-02-01), Muller et al.
patent: 5504026 (1996-04-01), Kung
patent: 5550090 (1996-08-01), Ristic
patent: 5798283 (1998-08-01), Montague et al.
patent: 5814554 (1998-09-01), De Samber et al.
W. Yun, CMOS Metallization for Integration with Micromachining Processes, Thesis for Master of Science Degree in Electrical Engineering from the University of California, Berkley, May 19, 1989.
W. Riethmuller, W. Benecke, U. Schnakenberg, and B. Wagner, "A Smart Accererometer with On-Chip Electronics Fabricated by a Commercial CMOS Process," Sensors and Actuators A, vol. 31, pp. 121-124, 1992.
W. Kuehnel and S. Sherman, "A Surface Micromachined Silicon Accelerometer with On-Chip Detection Circuitry," Sensors and Acuators A, vol. 45, pp. 7-16, 1994.
R. T. Howe, "Polysilicon Integrated Microsystems: Technologies and Applications," Digest of Technical Papers for the 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX, Stockholm, Sweden, Jun. 25-29, 1995, vol. 1, pp. 43-46, 1995.
P. J. Ireland, "High Aspect Ratio Contacts: A Review of the Current Tungsten Plug Process," Thin Solid Films, vol. 304, pp. 1-12, 1997.
S. Wolf, Silicon Processing fro the VLSI Era, vol. 2, pp. 247-251, 1990.
Barron Carole C.
Fleming James G.
Montague Stephen
Hohimer John P.
Sandia Corporation
Trinh Michael
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