Method for integrating high voltage and high speed bipolar...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Making plural bipolar transistors of differing electrical...

Reexamination Certificate

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C257S566000

Reexamination Certificate

active

07968417

ABSTRACT:
According to an exemplary embodiment, a method for integrating a high speed bipolar transistor in a high speed transistor region of a substrate with a high voltage transistor in a high voltage transistor region of the substrate includes forming a buried subcollector in the high speed transistor region of the substrate. The method further includes forming a first high energy implant region in the high voltage transistor region of the substrate, where the first high energy implant region extends to a depth greater than a depth of a peak dopant concentration of the buried subcollector, thereby increasing a collector-to-emitter breakdown voltage of the high voltage transistor. The collector-to-emitter breakdown voltage of the high voltage transistor can be greater than approximately 5.0 volts. The high speed bipolar transistor can have a cutoff frequency of greater approximately 200.0 GHz.

REFERENCES:
patent: 4379726 (1983-04-01), Kumamaru et al.
patent: 6977426 (2005-12-01), Gomi et al.

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