Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-07-08
2008-07-08
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S422000, C438S424000, C438S435000, C438S627000, C257SE21499
Reexamination Certificate
active
07396739
ABSTRACT:
A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substrate to form a cavity; formation of a photoresistive layer with a homogeneous thickness over the back of the substrate; placement of an electronic component on the photoresistive layer formed in the cavity for adhesion of the electronic component to the photoresistive layer; removal of the formed photoresistive layer except for the area on which the electronic component adheres to the photoresistive layer in the cavity; and formation of a fixing layer over the back of the substrate to fix the electronic component in the cavity of the substrate.
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Atmel Germany GmbH
Geyer Scott B.
Muncy Geissler Olds & Lowe, PLLC
Nikmanesh Seahvosh J
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