Method for integrating an electronic component or similar...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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Details

C438S422000, C438S424000, C438S435000, C438S627000, C257SE21499

Reexamination Certificate

active

07396739

ABSTRACT:
A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substrate to form a cavity; formation of a photoresistive layer with a homogeneous thickness over the back of the substrate; placement of an electronic component on the photoresistive layer formed in the cavity for adhesion of the electronic component to the photoresistive layer; removal of the formed photoresistive layer except for the area on which the electronic component adheres to the photoresistive layer in the cavity; and formation of a fixing layer over the back of the substrate to fix the electronic component in the cavity of the substrate.

REFERENCES:
patent: 4797715 (1989-01-01), Thillays et al.
patent: 5834334 (1998-11-01), Leedy
patent: 2003/0022397 (2003-01-01), Hess et al.
patent: 2005/0254673 (2005-11-01), Hsieh et al.
patent: 197 20 300 (1997-12-01), None
patent: 0 478 426 (1992-04-01), None
patent: 2 202 673 (1988-09-01), None
patent: 2 224 600 (1990-05-01), None
patent: WO-01/24259 (2001-04-01), None

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