Method for integrating a localized bragg grating into a semicond

Details Method for integrating a localized bragg grating into a semicond Method for integrating a localized bragg grating into a semicond

1996-12-24

1998-10-06

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 31, 438 29, 430321, 385 10, 372 96, H04S 318

Patent

active

058175377

ABSTRACT:
A Bragg grating is produced in a semiconductor component by wet etching through a resin mask developed after holographic exposure. This causes the regions of the grating at the boundary of other parts of the component to be etched more deeply. To compensate this, the method includes further irradiation through a second mask disposed at a distance from the part of the resin mask that defines the location of the grating. Applications include opto-electronic components.

REFERENCES:
patent: 5004673 (1991-04-01), Vlannes
patent: 5274660 (1993-12-01), Abe
patent: 5288659 (1994-02-01), Koch et al.
Webster's II New College Dictionary, Houghton Mifflin, p. 672 (no month given), 1995.

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