Method for integrated circuit fabrication including linewidth co

Details Method for integrated circuit fabrication including linewidth co Method for integrated circuit fabrication including linewidth co

1992-12-30

1994-07-05

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 156643, 156657, 1566591, 1566611, H01L 2131

Patent

active

053267273

ABSTRACT:
Pattern transfer from a resist to an underlying layer is accomplished by etching the underlying layer in a plasma comprising hydrogen bromide and oxygen. Accuracy of pattern transfer is obtained by using first and second materials underneath the resist. The first and second materials may be, e.g., polysilicon and a photoresist. Etching of the resist is performed under conditions designed to minimize changes in the horizontal dimensions.

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patent: 4615782 (1986-10-01), Namatsu et al.
patent: 4657629 (1987-04-01), Bigelow et al.
patent: 4770739 (1988-09-01), Orvek et al.
patent: 4812200 (1989-03-01), Birkle et al.
patent: 5126231 (1992-06-01), Levy

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