Method for insulating film formation, storage medium from...

Details Method for insulating film formation, storage medium from... Method for insulating film formation, storage medium from...

2009-02-06

2011-10-11

Brewster, William M. (Department: 2823)

Coating apparatus

Gas or vapor deposition

Multizone chamber

C438S761000, C438S762000

Reexamination Certificate

active

08034179

ABSTRACT:
In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.

REFERENCES:
patent: 2005/0136610 (2005-06-01), Kitagawa et al.
patent: 2006/0192248 (2006-08-01), Wang
patent: 101010787 (2007-08-01), None
patent: 1786030 (2007-05-01), None
patent: 4-43642 (1992-02-01), None
patent: 9-181072 (1997-07-01), None
patent: 11-67747 (1999-03-01), None
patent: 10-2007-0047769 (2007-05-01), None
patent: 10-2007-0095989 (2007-10-01), None
patent: 235433 (2005-07-01), None
patent: 01/69665 (2001-09-01), None
patent: 02/059956 (2002-08-01), None
patent: 2004/008519 (2004-01-01), None
patent: 2006/025363 (2006-03-01), None
International Search Report for International Application No. PCT/JP2009/052447 mailed May 19, 2009 with English translation.

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