Method for inspection of a wafer

Details Method for inspection of a wafer Method for inspection of a wafer

2007-11-06

2007-11-06

Stafira, Michael P. (Department: 2886)

Optics: measuring and testing

Inspection of flaws or impurities

Surface condition

C356S237400

Reexamination Certificate

active

11011059

ABSTRACT:
Defects on a wafer (26) can be detected using bright-field and/or dark-field illumination. The radiation incident onto the wafer (26) has, in this context, a substantial influence on the reliability of the measurement results. To improve the reliability of the measurement results, the wafer (26) is illuminated with an illumination device (12), adjustment of the illumination device (12), in particular its brightness and frequency, being accomplished in consideration of read-out stored illumination setpoints. These illumination setpoints are determined by way of a previous reference measurement.

REFERENCES:
patent: 6437862 (2002-08-01), Miyazaki et al.
patent: 6928185 (2005-08-01), Yonezawa
patent: 43 10 149 (1996-05-01), None
patent: 0 455 857 (1991-11-01), None
Ingrid Peterson et al., “Lithography Defects: Reducing and Managing Yield Killers Through Photo Cell Monitoring”, Yield Management Solutions, Spring 2000, pp. 17-24.

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