Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-03-21
2006-03-21
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C257S040000
Reexamination Certificate
active
07015051
ABSTRACT:
A wafer is irradiated with laser light having a wavelength which is transmitted through an inside of a crystal of the wafer and does not generate an electromotive force due to photo-excitation while the laser light is scanned. When a temperature of the wafer is increased by the irradiation, a thermo-electromotive force is generated in a crystalline abnormal part of the wafer by a Seebeck effect. A defect inside the crystal is detected such that the thermo-electromotive force is detected by a change in voltage or current which appears between an anode and a cathode of the wafer and the thermo-electromotive force is displayed on a CRT.
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Dang Phuc T.
Fitzpatrick ,Cella, Harper & Scinto
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