Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Patent
1996-09-25
1998-10-13
Dutton, Brian
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
438401, 430313, H01L 2100, H01L 2176, G03C 300
Patent
active
058211314
ABSTRACT:
A method for inspecting process defects occurring in a semiconductor device, which utilizes the phenomenon that even when photo shield film patterns are used, patterns of an etchable layer have different dimensions at different positions in a field region. A first etchable layer is patterned using positive photoresist film patterns. A second etchable layer is then patterned using negative photoresist film patterns formed by use of the same light exposure mask used for the positive photoresist film patterns. The second etchable layer patterns have a dimension larger than the first etchable layer patterns on one side of the field region, thereby exhibiting low reflection. On the other side of the field region, the first etchable layer patterns are partially exposed, thereby generating high reflection. Based on the result of the detection, the defect inspection device measures positions, density and dimensions of the first etchable layer patterns having different critical dimensions at different positions. Accordingly, a variation in dimension of patterns caused by a proximity effect can be derived by quantitatively measuring the difference in critical dimension of the patterns at different positions in the field region, the characteristic of the lens of the stepper and errors occurring in the formation of photoresist film patterns of the mask.
REFERENCES:
patent: 4586822 (1986-05-01), Tanimoto
patent: 4650744 (1987-03-01), Amano
patent: 5001083 (1991-03-01), D'Anna
Dutton Brian
Hyundai Electronics Industries Co,. Ltd.
LandOfFree
Method for inspecting process defects occurring in semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for inspecting process defects occurring in semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for inspecting process defects occurring in semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-312754