Method for inspecting photoresist pattern

Details Method for inspecting photoresist pattern Method for inspecting photoresist pattern

2011-04-26

2011-04-26

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S017000, C438S689000, C257SE21530

Reexamination Certificate

active

07932104

ABSTRACT:
A method for inspecting a photoresist pattern is disclosed. First, a substrate with a first doping region is provided. Then, a photoresist is formed to cover the substrate. Later, the photoresist is patterned to form a photoresist pattern. Afterwards, the substrate is doped by using the photoresist pattern, and a PN junction exists in the first doping region. Thereafter, a current passing through the PN junction is tested to inspect the photoresist pattern.

REFERENCES:
patent: 6127237 (2000-10-01), Tsuchiaki
patent: 6784520 (2004-08-01), Doi
patent: 2005/0026047 (2005-02-01), Yang

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