Method for inspecting an electronic state of a surface of a semi

Details Method for inspecting an electronic state of a surface of a semi Method for inspecting an electronic state of a surface of a semi

1991-03-27

1993-03-23

Nguyen, Vinh

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 731, 324158D, 324642, G01R 3126, G01R 2706

Patent

active

051967863

ABSTRACT:
Applying a first light (.lambda.=950 nm) to a Si wafer to generate electron-hole pairs, a microwave is emitted to the Si wafer and the amount of reflection of the microwave is measured. In like manner, applying a second light (.lambda.=633 nm), the amount of reflection of the microwave is measured. The two amounts are normalized by intensities of the lights respectively. In order to cancel an error resulting from geometrical position between a measuring apparatus and the Si wafer, a normalized finite difference is calculated through subtraction between the normalized amounts. The difference may be obtained by another calculation so that it stays in a specified width when a uniformly doped Si wafer is measured.

REFERENCES:
patent: 3939415 (1976-02-01), Terasawa
patent: 4329686 (1982-05-01), Mourou
patent: 4605893 (1986-08-01), Braslau
patent: 4949034 (1990-08-01), Imura et al.
patent: 5081414 (1992-01-01), Kusama et al.

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