Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2007-01-30
2007-01-30
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S014000, C438S015000, C438S800000, C356S036000, C356S237100, C356S237200, C257SE23001
Reexamination Certificate
active
10840287
ABSTRACT:
The present invention provides a method for inspecting a connecting surface of a flip chip to solve problems that the grinding, polishing and chemical etching method is used for making a sample. The present invention utilizes ion beam etching technology for making and processing a sample of the flip chip (FC). The ion beam etching technology includes two modes: keeping the energy of ion beam and increasing the etching time; and keeping the etching time and increasing the ion beam energy. The ion beam etching technology can remove a deforming portion between the solder ball and the metal pad, which is connected thereto because of the grinding and polishing. Specially, it is easy to analyse a sample of a scanning electron microscope (SEM) which includes an intermetallic compound formed between the solder ball and the metal pad connected thereto.
REFERENCES:
patent: 6013572 (2000-01-01), Hur et al.
patent: 6576900 (2003-06-01), Kelly et al.
patent: 6657707 (2003-12-01), Morken et al.
patent: 329020 (1998-04-01), None
Duh Jenq-Gong
Lu Shui-Jin
National Tsing Hua University
Novacek Christy
Smith Zandra V.
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