Method for initiating the float zone melting of semiconductors

Details Method for initiating the float zone melting of semiconductors Method for initiating the float zone melting of semiconductors

1980-03-10

1981-09-29

Rubinson, Gene Z.

Electric heating

Metal heating

Of cylinders

219 1077, 156620, H05B 630

Patent

active

042924871

ABSTRACT:
An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.

REFERENCES:
patent: 2916593 (1959-12-01), Herrick
patent: 3046379 (1962-07-01), Keller et al.
patent: 3064109 (1962-11-01), Peschel
patent: 3198929 (1965-08-01), Stut
patent: 3232716 (1966-02-01), Quast
patent: 3265470 (1966-08-01), Keller
patent: 3441876 (1969-04-01), Zwanenburg
patent: 3567895 (1971-03-01), Paz
patent: 3880599 (1975-04-01), Keller
patent: 4032740 (1977-06-01), Mittelmann
patent: 4078168 (1978-03-01), Kelly
patent: 4093839 (1978-06-01), Moliterno et al.
Keck et al., `Floating Zone Recrystallization of Silicon`, The Review of Scientific Instruments, vol. 25, No. 4, pp. 331-334, Apr. 1954.

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