Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-07-21
1977-10-11
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, 118415, H01L 21208
Patent
active
040533344
ABSTRACT:
A method for independent control of a plurality of volatile dopants in liquid phase epitaxial fabrication of doped layers of semiconductors upon a semiconductor substrate, utilizes spatially separated sources of each dopant, each source being independently temperature controlled. One dopant source is located in a melt of a carrier metal and of the elements required to form the desired semiconductor material and has the saturation concentration thereof determined by the temperature of the melt, while the remaining dopant is vaporized to create a partial pressure thereof over the melt, with control of the source temperature controlling partial pressure and therefore concentration, which is less than or equal to the solubility of the remaining dopant at the melt temperature, in the melt.
REFERENCES:
patent: 3677836 (1972-07-01), Lorenz
patent: 3870575 (1975-03-01), Dosen
patent: 3933538 (1976-01-01), Akai et al.
Ehle Roger S.
Garwacki Walter
Cohen Joseph T.
General Electric Company
Krauss Geoffrey H.
Ozaki G.
Squillaro Jerome C.
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