Method for increasing utilizable surface of rugged polysilicon l

Details Method for increasing utilizable surface of rugged polysilicon l Method for increasing utilizable surface of rugged polysilicon l

1997-08-07

1999-02-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

438704, 438719, 438733, 438753, 216 62, 216 87, H01L 2100

Patent

active

058693998

ABSTRACT:
The present invention is related to a method for increasing utilzable surface area of a rugged polysilicon layer in a semiconductor device. The present method includes steps of: (a) providing a pre-grown rugged polysilicon layer which is composed of polysilicon with first dopants doped therein; (b) forming another polyslicon layer on the pre-grown rugged polysilicon layer; (c) removing a portion of the another polysilicon layer by an anisotropic etching process to expose an upper surface of the pre-grown rugged polysilicon layer; and (d) etching the resulting pre-grown rugged polysilicon layer which an etching selectivity ratio of the pre-grown rugged polysilicon layer to the another polysilicon layer being greater than one, to obtain the rugged polysilicon layer having increasing utilizable surface area. A semiconductor device containing the rugged polysilicon layer created according to the present invention can work well in a relatively dense and small semiconductor chip.

REFERENCES:
patent: 3980507 (1976-09-01), Carley
patent: 4648939 (1987-03-01), Maa et al.
patent: 5149676 (1992-09-01), Kim et al.
patent: 5639689 (1997-06-01), Woo

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