Method for increasing the radiation resistance of charge storage

Details Method for increasing the radiation resistance of charge storage Method for increasing the radiation resistance of charge storage

1981-12-21

1985-03-26

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 148 15, 148181, 357 236, 357 48, H01L 2702

Patent

active

045064369

ABSTRACT:
A method for reducing the susceptibility of integrated circuit dynamic memory devices to environmentally produced radiation, such as alpha particles, in which a buried layer, having a majority carrier concentration substantially equal to or greater than the concentration of free carriers generated by the radiation and being between one and four orders of magnitude greater concentration than that of the semiconductor substrate, is ion implanted within a few microns of the substrate surface after at least one major high temperature processing step in the manufacturing process has been completed.

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