Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing lattice imperfection flux pinning sites or...
Patent
1996-03-15
1997-11-04
King, Roy V.
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing lattice imperfection flux pinning sites or...
505480, 427 62, B05D 306, B05D 512
Patent
active
056839677
ABSTRACT:
Method for increasing the critical current density in Type II superconducting materials. The generation of a regular pattern of defects for pinning vortices, where the density of pinning sites is matched to the density of vortices produced by a chosen magnetic field in the particular superconducting material, is described. It is anticipated that such a defect pattern will substantially increase the critical current density carrying capability of the superconducting material so patterned. The fabrication of thick superconductors and conductors having chosen shapes is also described.
REFERENCES:
Kumakura et al, J. Appl. Phys. 72(2), Jul. 1992, pp. 800-802.
Kohiki et al, Appl. Phys. A 50 (1990) pp. 509-514.
Metlushko et al, Appl. Phys. Lett. 63(20) Nov. 1993, pp. 2821-2823.
Schuster et al, Phys. Rev. Bi Condens. Matter, 47(1) 1993 pp. 373-383.
Freund Samuel M.
King Roy V.
LandOfFree
Method for increasing the critical current density in type II su does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for increasing the critical current density in type II su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing the critical current density in type II su will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1832970