Method for increasing radiation hardness of MOS gate oxides

Details Method for increasing radiation hardness of MOS gate oxides Method for increasing radiation hardness of MOS gate oxides

1987-02-06

1988-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437240, H01L 21425

Patent

active

047481315

ABSTRACT:
The resistance to radiation damage of metal-oxide-semiconductor devices is improved by the incorporation of fluorine into the gate oxide of the device by robust procedures. The introduction of fluorine into the oxide results in a significant reduction of radiation-induced interface state density. Three methods by which the fluorine is introduced into the gate oxide are: (1) silicidation of the polysilicon gate by chemical vapor deposition using tungsten hexafluoride as a source gas; (2) ion implantation of fluorine into the polysilicon layer on top of the gate oxide, followed by a high temperature anneal to allow the fluorine to migrate into the oxide; and (3) growth of the oxide in a dilute NF.sub.3 ambient.

REFERENCES:
patent: 3933530 (1976-01-01), Mueller et al.

Affiliated with

Also associated with

Rating

Method for increasing radiation hardness of MOS gate oxides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for increasing radiation hardness of MOS gate oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing radiation hardness of MOS gate oxides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1874207