Method for increasing pad bonding of an IC (1)

Details Method for increasing pad bonding of an IC (1) Method for increasing pad bonding of an IC (1)

1993-12-09

1995-02-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437195, H01L 2144, H01L 2148

Patent

active

053915194

ABSTRACT:
In the fabrication of VLSI circuits, the diffusion barrier layer on the pad areas are removed prior to the formation of metal layer. Metal layer on the pad areas are thus directly contact with the underlying SiO.sub.2 layer, thereby improving the pad bonding yield.

REFERENCES:
patent: 4824803 (1989-04-01), Us et al.

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