Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-07-08
2008-07-08
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S780000
Reexamination Certificate
active
07396692
ABSTRACT:
Methods for improving the net remnant polarization of a polymer memory cell are disclosed. In one embodiment, the polymer material is heated above the Curie temperature of the polymer material, and the domains of the polymer material are aligned with an externally applied electric field.
REFERENCES:
patent: 3490050 (1970-01-01), Weiner
patent: 5267224 (1993-11-01), Yamazaki
patent: 5321533 (1994-06-01), Kumar
patent: 5880804 (1999-03-01), Yamaguchi et al.
patent: 5952991 (1999-09-01), Akiyama
patent: 6407797 (2002-06-01), Biradar et al.
patent: 6757035 (2004-06-01), Choi et al.
patent: 7173842 (2007-02-01), Isenberger et al.
patent: 2002/0017607 (2002-02-01), Lehman et al.
patent: 2002/0181072 (2002-12-01), Cook
patent: 2004/0131862 (2004-07-01), Szmanda et al.
patent: 2004/0171773 (2004-09-01), Bu et al.
Koda et al., Nematic Liquid Crystals Dispersed in a ferroelectric Copolymer of Vinylidene Fluoride and Trifluoroethylene, Jpn. J. Appl. Phys., vol. 42, (2003), pp. 4426-4430.
Kimura et al., Orientation control of poly(vinylidenefluoride-trifuoroethylene) crystals and molecules using atomic force microscopy, Applied Physics Letters, vol. 82, No. 23, pp. 4050-4052.
Andideh Ebrahim
Diana Daniel C.
Windlass Hitesh
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Wilczewski M.
LandOfFree
Method for increasing ferroelectric characteristics of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for increasing ferroelectric characteristics of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing ferroelectric characteristics of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2802869