Method for increasing efficiency of thermotunnel devices

Details Method for increasing efficiency of thermotunnel devices Method for increasing efficiency of thermotunnel devices

2008-01-29

2008-01-29

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S104000, C257S106000, C257SE29042, C257SE29339, C438S979000

Reexamination Certificate

active

07323709

ABSTRACT:
The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.

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Tavkhelidze et al., “Electron tunneling through large area vacuum gap”, Thermoelectrics, 2002. Proceedings ICT '02., Aug. 25, 2002, pp. 435-438, Piscataway, NJ, USA.
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