Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2006-09-12
2006-09-12
Vu, Ngoc-Yen (Department: 2612)
Television
Camera, system and detail
Solid-state image sensor
Reexamination Certificate
active
07106373
ABSTRACT:
A method is disclosed for obtaining a read-out signal of a pixel having at least a photosensitive element with a charge storage node. Charge carriers are converted from radiation impinging on the photosensitive element. While acquiring charge carriers on said charge storage node, after a time period at least one reset pulse with a predetermined amplitude is applied on said charge storage node, said pulse resetting incompletely the charge carriers acquired at the moment of applying said pulse; and thereafter charge carriers are further acquired on said charge storage node.
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Horii et al., “A 490×404 Element Imager for a Single-Chip Color Camera”,IEEE International Solid-State Circuits Conference, 1985, pp. 96-97.
Nagakawa et al., “A 580×500-Element CCD Imager with a Shallow Flat P Well”,IEEE International Solid-State Circuits Conference,1985, pp. 98-99.
Mahowald, M.A., “Silicon Retina with Adaptive Photoreceptors”,SPIE,vol. 1473, 1991, pp. 52-58.
Mann, J. “Implementing Early Visual Processing In Analog VLSI: Light Adaptation”,SPIE,vol. 1473, 1991, pp. 128-136.
Ono et al., “Analysis of Smear Noise In Interline-CCD Image Sensor with Gate-Free Isolation Structure”, Abstract of the 1991 Int'l Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 68-70.
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Klein, P., “Design and Performance of Semiconductor Detectors with Integrated Amplification and Charge Storage Capability”,Nuclear Instruments and Methods in Physics Research A305, 1991, pp. 517-526.
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Blakely , Sokoloff, Taylor & Zafman LLP
Cypress Semiconductor Corporation (Belgium) BVBA
Vu Ngoc-Yen
Whipkey Jason
LandOfFree
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