Method for increasing capacity of a capacitor

Details Method for increasing capacity of a capacitor Method for increasing capacity of a capacitor

1998-04-14

2000-01-04

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438381, H01L 2120

Patent

active

060109440

ABSTRACT:
The present invention relates to a method for increasing capacity of a capacitor. The method includes forming a polysilicon spacer on sidewall of a first polysilicon electrode and then treating the polysilicon spacer with a phosphoric acid to form a roughened surface area on the polysilicon spacer and the first polysilicon electrode. By this arrangement, the overall surface area of the polysilicon spacer and the first polysilicon electrode can be increased and the capacity of a capacitor can be increased accordingly.

REFERENCES:
patent: 5286668 (1994-02-01), Chou
patent: 5744387 (1998-04-01), Tseng
patent: 5766995 (1998-06-01), Wu

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