Method for in situ removal of particulate residues resulting fro

Details Method for in situ removal of particulate residues resulting fro Method for in situ removal of particulate residues resulting fro

1995-11-08

1998-06-23

Warden, Jill

Coating processes

With pretreatment of the base

Etching, swelling, or dissolving out part of the base

134 13, 134 2, 134 19, B05D 300

Patent

active

057702632

ABSTRACT:
Disclosed is a process for cleaning silicon surfaces of native oxide films. The process utilizes fluorine containing cleaning materials such as anhydrous hydrofluoric acid to clean the oxide from the surface. A fluorine containing particulate matter which forms on the surface as a result of the fluorine containing cleaning materials is then removed by heating the surface to a high temperature. The process is conducted in a non-oxidizing ambient and is preferably conducted in a cluster tool so that the heating step can take place in the same chamber of the cluster tool as later metal deposition step.

REFERENCES:
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5235995 (1993-08-01), Bergman et al.
patent: 5268069 (1993-12-01), Chapple-Sokol et al.
patent: 5288333 (1994-02-01), Tanaka et al.
Sherman, Chemical Vapor Deposition for Microeletronics, Noyes publications, 1987, pp. 103-114.

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