Fishing – trapping – and vermin destroying
Patent
1992-02-28
1993-07-20
Kunemund, Robert
Fishing, trapping, and vermin destroying
156610, 156613, 156DIG73, 156DIG103, H01L 2102
Patent
active
052293335
ABSTRACT:
In one form of the invention, a method is disclosed for growing CaF.sub.2 on a silicon surface, comprising the steps of maintaining the silicon surface at a first temperature below approximately 500.degree. C., starting a deposition of CaF.sub.2 on the silicon surface, stopping the deposition, and then annealing the CaF.sub.2 in forming gas at a temperature below 600.degree. C.
REFERENCES:
C.-C. Cho, et al., "Substrate Orientation and Processing Effects on Strained CaF.sub.2 /Si Grown by Molecular Beam Epitaxy", The Japan Society of Applied Physics, Reprinted from Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, pp. 1167-1168, Aug. 22-24, 1990.
C.-C. Cho, et al., "Electrical Properties of Low-Temperature-Grown CaF.sub.2 on Si(111)", Applied Physics Letter, pp. 338-340, 60 (3), Jan. 20, 1992.
R. W. Fathauer, et al., "MIS Characterization and Modeling of the Electrical Properties of the Epitaxial CaF.sub.2 /Si(111) Interface", Journal of Electronic Materials, pp. 169-175, vol. 16, No. 3, 1987.
R. People, et al., "Electrical Characterization of the CaF.sub.2 /Si-Epitaxial Insulator/Semiconductor Interface by MIS Admittance", Materials Research Society Symposium Proceedings, pp. 169-173, vol. 37, 1985.
T. P. Smith, III, et al., "The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures", Materials Research Society Symposium Proceedings, pp. 295-305, vol. 54, 1986.
H. Y. Liu, et al., "A Study of Epitaxial Relations of CaF.sub.2 Films Grown on (111) Silicon by Molecular Beam Epitaxy", Mat. Res. Soc. Symp. Proc., pp. 111-116, vol. 221, 1991.
Cho Chih-Chen
Gnade Bruce E.
Kim Tae S.
Liu Hung-Yu
Nishioka Yasushiro
Donaldson Richard L.
Garrett Felisa
Kesterson James C.
Kunemund Robert
Skrehot Michael K.
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