Metal treatment – Compositions – Heat treating
Patent
1975-01-10
1977-01-25
Lovell, C.
Metal treatment
Compositions
Heat treating
357 91, H01L 21263
Patent
active
040049507
ABSTRACT:
In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.
REFERENCES:
patent: 3383567 (1968-05-01), King et al.
patent: 3513035 (1970-05-01), Fitzgerald et al.
patent: 3515956 (1970-06-01), Martin et al.
patent: 3622382 (1971-11-01), Brack et al.
patent: 3756862 (1973-09-01), Ahn et al.
Nelson et al., "Radiation-Enhanced Diffusion of Boron in Silicon", Appl. Phy. Let., Oct. 15, 1969, vol. 15, No. 8, pp. 246, 248.
Baruch Pierre
Borel Joseph
Monnier Joel
Agence Nationale de Valorisation de la Recherche (ANVAR)
Commissariat a l''Energie Atomique
Davis J. M.
Lovell C.
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