Method for improving the crystallinity of semiconductor films by

Details Method for improving the crystallinity of semiconductor films by Method for improving the crystallinity of semiconductor films by

1975-12-10

1977-11-22

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 427 53, 427 86, H01L 2126

Patent

active

040594610

ABSTRACT:
A method is disclosed for improving the crystallinity of semiconductor films by scanning the surface of such films with a shaped, focused laser beam. The laser is matched to the film so that the beam delivers sufficient energy thereto to heat the film above a temperature at which crystallization occurs along the scan track.

REFERENCES:
patent: 2855334 (1958-10-01), Lehovec
patent: 3458368 (1969-07-01), Haberecht
patent: 3584183 (1971-06-01), Chiaretta et al.
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3698947 (1972-10-01), Kemlage et al.
patent: 3848104 (1974-11-01), Locke

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