Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1996-09-27
1999-05-04
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427536, 427490, 427577, 427249, 4272558, 216 67, 134 11, C23C 1402, C08J 718, H05H 124, B08B 700
Patent
active
059002883
ABSTRACT:
A method of cleaning a substrate, in particular, the front face of a thermal ink jet printing device, to improve subsequent thin film deposition in a single chamber plasma processing system containing fluorine-containing deposits, involves treating the substrate with a hydrogen plasma. A front face coating for a thermal ink jet device may be formed by a method involving (1) treating a substrate of the thermal ink jet device with a hydrogen plasma; (2) optionally coating the cleaned substrate with an amorphous carbon layer; and (3) coating the substrate or amorphous carbon layer with a fluoropolymer layer.
REFERENCES:
patent: 4463359 (1984-07-01), Ayata et al.
patent: 4551778 (1985-11-01), Arai et al.
patent: 4601777 (1986-07-01), Hawkins et al.
patent: 4774530 (1988-09-01), Hawkins
patent: 4786352 (1988-11-01), Benzing
patent: 4889767 (1989-12-01), Yokoyama et al.
patent: 4950543 (1990-08-01), Winter et al.
patent: 4960609 (1990-10-01), Homola et al.
patent: 5043747 (1991-08-01), Ebisawa et al.
patent: 5073785 (1991-12-01), Jansen et al.
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5221414 (1993-06-01), Langley et al.
patent: 5244730 (1993-09-01), Nguyen et al.
patent: 5308950 (1994-05-01), Ramm et al.
patent: 5387310 (1995-02-01), Shiomi et al.
patent: 5403436 (1995-04-01), Fujimura et al.
patent: 5632821 (1997-05-01), Doi
patent: 5773098 (1998-06-01), Thomas
J. P. Simko et al., "Removal of Fluorocarbon Residues on CF4/H2 Reactive-Ion-Etched Silicon Surfaces Using A Hydrogen Plasma", Journal of the Electrochemical Society, vol. 138, No. 1, Jan. 1991, pp. 277-284.
M. E. Lin et al., "GaN grown on hydrogen plasma cleaned 6H-SiC substrates", Aplied Physics Letters, vol. 62, No. 7, Feb. 15, 1993, pp. 702-704.
Kuhman Daniel E.
Orlowski Thomas E.
Padgett Marianne
Xerox Corporation
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