Method for improving stability of tungsten chemical vapor deposi

Details Method for improving stability of tungsten chemical vapor deposi Method for improving stability of tungsten chemical vapor deposi

1992-09-09

1994-07-05

Kunemund, Robert

Fishing, trapping, and vermin destroying

H01L 2100

Patent

active

053267230

ABSTRACT:
A method for cleaning a chemical vapor deposition (CVD) process for depositing tungsten. After the tungsten has been deposited and the wafer has been removed from the chamber, the chamber undergoes an in-situ cleaning process. In the currently preferred embodiment the in-situ cleaning process consists of cleaning the chamber with nitrogen tri-fluoride (NF.sub.3) and hydrogen (H.sub.2) nitrogen (N.sub.2) plasmas. The tungsten CVD cleaning process also includes purging the chamber with the dilute mixture of silane (SiH.sub.4), argon (Ar) and nitrogen (N.sub.2).

REFERENCES:
patent: 3892650 (1975-07-01), Cuomo et al.
patent: 4563367 (1986-01-01), Sherman
patent: 5041311 (1991-08-01), Tsukune et al.
patent: 5043299 (1991-08-01), Chang et al.
patent: 5180432 (1993-01-01), Hansen

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