Fishing – trapping – and vermin destroying
Patent
1990-09-07
1991-11-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437225, 437228, 437231, 148DIG137, 426 96, 426240, H01L 2100, H01L 2102, H01L 2130, B05D 140
Patent
active
050666169
ABSTRACT:
A method for applying photoresist to a top surface of a semiconductor wafer for defining an electronic circuit pattern. The wafer is placed on a horizontal turntable and liquid solvent is dispensed onto the wafer's top surface. Spinning the wafer distributes the solvent to a substantially uniform film thickness over the entire top surface. Liquid photoresist is dispensed onto the top surface over the solvent film, preferably while spinning the wafer, to distribute a photoresist layer over the entire top surface. Photoresist discharge is controlled so that the wafer sirface remains entirely wetted by the solvent film during distribution of the liquid photoresist. The solvent viscosity is lower than the liquid photoresist viscosity and the solvent film thickness is sufficient to enable the photoresist to fully cover any bare silicon, high density or undercut circuit features, generally in a range of 500 to 10,000 Angstroms and preferably 1,000 to 5,000 Angstroms.
REFERENCES:
patent: 4113492 (1978-09-01), Sato et al.
patent: 4143189 (1979-03-01), Woods et al.
patent: 4188707 (1980-02-01), Asano et al.
patent: 4278754 (1981-07-01), Yamashita et al.
patent: 4290384 (1981-09-01), Ausschnitt et al.
patent: 4393807 (1983-07-01), Fujimura et al.
patent: 4658495 (1987-04-01), Flatley et al.
patent: 4661431 (1987-04-01), Bujese et al.
patent: 4696885 (1987-09-01), Vijan
patent: 4741926 (1988-05-01), White et al.
patent: 4800836 (1989-01-01), Yamamoto et al.
Moreau, W., Coating Solvent for Resist Films, IBM Tech. Dis. Bull. (USA), vol. 23, No. 3, p. 991, Aug. 1980.
Holihan, J., Controlled Gap Photoresist Spinning Process, IBM Tech. Dis. Bull. (USA), vol. 17, No. 11, p. 3281, Apr. 1975.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, pp. 430-434, Lattice Press, 1986.
Everhart B.
Hearn Brian E.
Hewlett--Packard Company
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