Method for improving MOS mobility

Details Method for improving MOS mobility Method for improving MOS mobility

2005-07-26

2005-07-26

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S359000, C438S422000

Reexamination Certificate

active

06921704

ABSTRACT:
A method of forming a silicon-on-insulator semiconductor device including providing a substrate and forming a trench in the substrate, wherein the trench includes opposing side walls extending upwardly from a base of the trench. The method also includes depositing at least two insulating layers into the trench to form a shallow trench isolation structure, wherein an innermost of the insulating layers substantially conforms to the base and the two side walls of the trench and an outermost of the insulating layers spans the side walls of the trench so that a gap is formed between the insulating layers in the trench. The gap creates compressive forces within the shallow trench isolation structure, which in turn creates tensile stress within the surrounding substrate to enhance mobility of the device.

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