Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-08
2011-03-08
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S185290, C365S185190
Reexamination Certificate
active
07903471
ABSTRACT:
A method for programming and erasing a PHINES memory device is comprising providing one or more additional pulses that are associated with a program or erase pulse, wherein the additional pulses are of similar polarity, but of lesser magnitude than the program or erase pulses. For an erase pulse on a PHINES memory device, two additional pulses can be utilized. For a program pulse on the source-side of a PHINES memory device, one additional pulse can be utilized that comprises a negative bias measured from a gate of the memory device to a source of the memory device. For a program pulse on the drain-side of a PHINES memory device, one additional pulse can be utilized that comprises a negative bias measured from a gate of the memory device to a drain of the memory device.
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Baker & McKenzie LLP
Ho Hoai V
Lappas Jason
Macronix International Co. Ltd.
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