Method for improving mechanical strength of the neck section of

Details Method for improving mechanical strength of the neck section of Method for improving mechanical strength of the neck section of

1997-07-17

1999-02-02

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117200, 117217, 117222, C30B 1520

Patent

active

058658874

ABSTRACT:
An apparatus and method for growing large diameter silicon crystals using the Czochralski (Cz) method, wherein the neck section of the crystal is significantly strengthened to eliminate the risk of breakage in the neck section, by providing a heat shield assembly which is located adjacent to the neck section and ascends in conjunction therewith to force the cooling gas directly onto the neck section of the silicon ingot.

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D.E. Bornside, T.A. Kinney and R.A. Brown; Minimization of thermoelastic stresses in Czochralski grown silicon; application of the integrated system model; Journal of Crystal Growth 108;Department of Chemical Engineering and Materials Processing Center, Massachusetts Institute of Technology, Aug. 23, 1990, pp. 779-805.

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