Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2010-03-04
2011-12-20
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220, C250S492200, C427S523000
Reexamination Certificate
active
08080814
ABSTRACT:
A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.
REFERENCES:
patent: 4367411 (1983-01-01), Hanley et al.
patent: 4539217 (1985-09-01), Farley
patent: 4587433 (1986-05-01), Farley
patent: 4847504 (1989-07-01), Aitken
patent: 4851693 (1989-07-01), Fisher
patent: 5834786 (1998-11-01), White et al.
patent: 6323497 (2001-11-01), Walther
patent: 7589333 (2009-09-01), Graf et al.
patent: 2004/0047561 (2004-03-01), Tuda
patent: 2004/0149983 (2004-08-01), Lee et al.
patent: 2006/0057303 (2006-03-01), Agarwal et al.
patent: 2009/0218315 (2009-09-01), Shannon
patent: 2009/0272918 (2009-11-01), Satoh
Office Action dated Mar. 3, 2011 in connection with U.S. Appl. No. 12/431,081.
Notice of Allowance dated Aug. 29, 2011 issued to U.S. Appl. No. 12/431,081, p. 1-19.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Souw Bernard E
LandOfFree
Method for improving implant uniformity during photoresist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for improving implant uniformity during photoresist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving implant uniformity during photoresist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4259598