Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-09-26
2006-09-26
Tugbang, A. Dexter (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603130, C029S603150, C029S603180, C360S324120
Reexamination Certificate
active
07111385
ABSTRACT:
A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
REFERENCES:
patent: 5802700 (1998-09-01), Chen et al.
patent: 5883764 (1999-03-01), Pinarbasi
patent: 6144534 (2000-11-01), Xue et al.
patent: 6219211 (2001-04-01), Gill
patent: 6278592 (2001-08-01), Xue et al.
patent: 6396669 (2002-05-01), Gill
patent: 6404606 (2002-06-01), Pinarbasi
patent: 2002/0085322 (2002-07-01), Pinarbasi
patent: 2002/0154458 (2002-10-01), Lin et al.
Chau Phong V.
Freitag James Mac
Pinarbasi Mustafa Michael
Zeng Hua Ai
Zolla Howard Gordon
Chambliss Bahner & Stophel P.C.
Hitachi Global Storage Technologies
Lynch David W.
Nguyen Tai Van
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