Method for improving differential etching rate of a metallic lay

Details Method for improving differential etching rate of a metallic lay Method for improving differential etching rate of a metallic lay

1997-12-30

2000-03-07

Acquah, Samuel A.

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

216 39, 216 58, 216 67, 216 77, 216 78, 216 79, B44C 122, C03C 2506

Patent

active

060335882

ABSTRACT:
A method for improving the differential etching rate of forming vias in a metallic layer by the addition of a nitrogen plasma processing operation into the conventional metal etching operation. The nitrogen plasma processing operation facilitates the formation of aggregates through a chemical reaction between gaseous nitrogen and metal. The aggregates are able to lower the etching rate of metal in such a way that its effect on a wide-open via is more than on a narrow-dense via. Hence, microloading effect on the etching rate is greatly improved.

REFERENCES:
patent: 4901129 (1990-02-01), Hynecek
patent: 4954459 (1990-09-01), Avanzino et al.
patent: 5609922 (1997-03-01), McDonald
patent: 5653812 (1997-08-01), Petrmichl et al.
patent: 5772906 (1998-06-01), Abraham

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