Method for improving dielectric breakdown strength of insulating

Details Method for improving dielectric breakdown strength of insulating Method for improving dielectric breakdown strength of insulating

1975-06-11

1977-01-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

H01L 21265

Patent

active

040010490

ABSTRACT:
It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO.sub.2 thin film, with a subsequent annealing procedure, improves the dielectric breakdown property of the film. The treated SiO.sub.2 film is found to be substantially more dense than a comparable untreated SiO.sub.2 film. It is theorized for the practice of this disclosure that the physical mechanism which produces the densification of the SiO.sub.2 film may be responsible for the enhanced dielectric properties of the film. Such an improved film is especially useful as the gate insulator layer in an insulated-gate electrode field-effect transistor device, and as an insulating layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO.sub.2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field effect devices in which the gate insulation is relatively thin, e.g. less than 500A, and in metallic magnetic-bubble devices in which a thin SiO.sub.2 layer is used to separate the sense element from the conductive magnetic film.

REFERENCES:
patent: 3472751 (1969-10-01), King
patent: 3540925 (1970-11-01), Athanas et al.
patent: 3657542 (1972-04-01), Futch et al.
patent: 3852120 (1974-12-01), Johnson et al.
patent: 3862930 (1975-01-01), Hughes

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