Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1996-12-11
1998-10-27
Green, Anthony
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
134 13, 438749, 438751, 438753, 438754, 438778, 438906, 438963, B08B 308, C25D 330, H01L 21311
Patent
active
058277846
ABSTRACT:
This is a method for improving contact openings during the manufacture of an integrated circuit. The process of forming a contact in an integrated circuit is often carried out rapidly, with imperfect control. As a result, incomplete removal of the insulating material may occur within the contact opening. In addition, the substrate material may be damaged to some extent within the contact opening by the contact formation process. In either case, high electrical resistance within the contact may result. Photo-resist may leave residue within the contact opening, low surface dopant concentrations, and insulative layer discontinuities may cause increased electrical resistance within the contact. A sequential application of two types of aqueous etchants will smooth the contact sidewall and remove a thin layer of relatively low dopant concentration at the surface of the substrate and other debris which may remain from the contact formation process and thereby allow lower resistance contacts to be formed.
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Donaldson Richard L.
Green Anthony
Laws Gerald E.
Marshall, Jr. Robert D.
Texas Instruments Incorporated
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