Method for improving ash rate uniformity in photoresist...

Electric heating – Metal heating – By arc

Reexamination Certificate

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C219S121410, C156S345390

Reexamination Certificate

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06878898

ABSTRACT:
A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance32from the edge-to-center of the upper and lower grid plates,30and31,of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.

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patent: 6230650 (2001-05-01), Yamazaki

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