Electric heating – Metal heating – By arc
Reexamination Certificate
2005-04-12
2005-04-12
Van, Quang T. (Department: 3742)
Electric heating
Metal heating
By arc
C219S121410, C156S345390
Reexamination Certificate
active
06878898
ABSTRACT:
A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance32from the edge-to-center of the upper and lower grid plates,30and31,of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.
REFERENCES:
patent: 4873445 (1989-10-01), Le Jeune
patent: 5248371 (1993-09-01), Maher et al.
patent: 5266146 (1993-11-01), Ohno et al.
patent: 5453124 (1995-09-01), Moslehi et al.
patent: 5453305 (1995-09-01), Lee
patent: 5781693 (1998-07-01), Ballance et al.
patent: 5948283 (1999-09-01), Grosshart
patent: 6087615 (2000-07-01), Schork et al.
patent: 6162323 (2000-12-01), Koshimizu
patent: 6230650 (2001-05-01), Yamazaki
Hogan Timothy J.
Taylor Timothy A.
Brady III Wade James
Brill Charles A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Van Quang T.
LandOfFree
Method for improving ash rate uniformity in photoresist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for improving ash rate uniformity in photoresist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving ash rate uniformity in photoresist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3411659