Method for improving adhesion of metal film on a dielectric surf

Details Method for improving adhesion of metal film on a dielectric surf Method for improving adhesion of metal film on a dielectric surf

1981-02-23

1983-09-13

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

204192C, 427 91, 427124, 427253, 4272551, H01L 21285

Patent

active

044042353

ABSTRACT:
The surface of a dielectric is exposed to gaseous WF.sub.6 and H.sub.2 at a temperature between approximately 500.degree. C. and 650.degree. C. This initiates the formation of tungsten islands on the dielectric surface without damaging the surface. An appropriate metallization layer is then deposited from the vapor phase onto the tungsten island covered dielectric surface.

REFERENCES:
patent: 3477872 (1969-11-01), Amick
patent: 3785862 (1974-01-01), Grill
patent: 4349408 (1982-09-01), Tarng
Shaw et al., "Vapor-Deposited Tungsten as a Metallization and Interconnection Material for Silicon Devices", RCA Review, Jun. 1970, pp. 306-327.

Affiliated with

Also associated with

Rating

Method for improving adhesion of metal film on a dielectric surf does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving adhesion of metal film on a dielectric surf, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving adhesion of metal film on a dielectric surf will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1730026