Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2008-03-25
2008-03-25
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S478000, C438S758000, C438S766000, C257SE21525
Reexamination Certificate
active
10639647
ABSTRACT:
A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe film so as to achieve relaxation of lattice distortion in the SiGe film as well as improved crystallinity and/or surface condition of the SiGe film, so that improved conditions for improving quality of the SiGe film on the Si or SOI substrate can be determined.
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Baba Tomoya
Yoshida Akira
Nixon & Vanderhye P.C.
Novacek Christy L
Sharp Kabushiki Kaisha
Wilczewski M.
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