Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-12-26
2006-12-26
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S017000
Reexamination Certificate
active
07153711
ABSTRACT:
The present invention provides a method for manufacturing semiconductor devices, a method for manufacturing an integrated circuit, and a method for improving a drive current for semiconductor devices on a wafer-by-wafer basis. The method for manufacturing semiconductor devices, among other elements, includes patterning gate structures on a substrate (220), each of the gate structures having a profile associated therewith, and obtaining information representative of the profiles of the gate structures (240). In accordance with the present invention the information may then be fed forward to alter a manufacturing parameter associated with a drive current of the semiconductor devices (250).
REFERENCES:
patent: 6556303 (2003-04-01), Rangarajan et al.
patent: 6821859 (2004-11-01), Raebiger et al.
Banu Kaneez E-shaher
Friedmann James B.
Loewecke Jeffrey G.
Vaughan James D.
Xu Yuqing
Brady III W. James
McLarty Peter K.
Picardat Kevin M.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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