Method for improved surface planarity in selective epitaxial sil

Details Method for improved surface planarity in selective epitaxial sil Method for improved surface planarity in selective epitaxial sil

1987-08-31

1988-11-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG26, 148DIG50, 156613, 437112, 437970, 437 90, H01L 21205, H01L 2176

Patent

active

047866152

ABSTRACT:
A method for growing selective epitaxial silicon by chemical vapor deposition resulting in a substantially planar surface by growing superimposed silicon layers at temperatures above and below a transition point.

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