Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-02-01
2005-02-01
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185010, C365S185020, C365S185270, C365S185280
Reexamination Certificate
active
06850440
ABSTRACT:
A method of operating a non-volatile memory device includes providing the non-volatile memory device with a body of first conductivity, a source region of second conductivity, a drain region of second conductivity on the body, and a control gate over the body adjacent to the source and drain regions. A first voltage of first polarity is applied to the control gate. A second voltage of first polarity is applied to the drain region, the second voltage being less than about 5.6 volts. A third voltage of second polarity is applied to the source region.
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Chen Wei-Fan
Lin Shi-Tron
Nguyen Van Thu
Townsend and Townsend / and Crew LLP
Winbond Electronics Corporation
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