Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-06-26
2008-10-21
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257SE23145
Reexamination Certificate
active
07439628
ABSTRACT:
Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric and creating a line pattern through the layer of line-level dielectric, and transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern thereby generating an aligned dual damascene structure. A conductive liner layer is deposited in the dual damascene structure followed by filling the dual damascene structure with a conductive fill metal to form a set of metal lines. The metal and liner layers are planarized.
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Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Parekh Nitin
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