Method for improved metrology by protecting photoresist...

Details Method for improved metrology by protecting photoresist... Method for improved metrology by protecting photoresist...

2008-05-20

2008-05-20

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C438S016000

Reexamination Certificate

active

10202956

ABSTRACT:
A method for preserving semiconductor feature opening profiles for metrology examination including providing semiconductor wafer having a process surface comprising semiconductor feature openings; blanket depositing over the semiconductor feature openings to substantially fill the semiconductor feature openings at least one layer of material comprising silicon oxide; and, preparing a portion of the semiconductor wafer in cross sectional layout for metrology examination.

REFERENCES:
patent: 6646259 (2003-11-01), Chang et al.
patent: 6866988 (2005-03-01), Lu et al.

Affiliated with

Also associated with

Rating

Method for improved metrology by protecting photoresist... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improved metrology by protecting photoresist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improved metrology by protecting photoresist... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3950471