Method for improved gate oxide integrity on bulk silicon

Details Method for improved gate oxide integrity on bulk silicon Method for improved gate oxide integrity on bulk silicon

1997-10-20

2000-08-01

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438471, 438474, 438517, H01L 21322

Patent

active

060966254

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device on a substrate. The process involves denuding the substrate by heating to create a denuded zone within the substrate. A screen oxide layer is formed prior to implanting ions into the substrate. This oxide layer remains during the implantation step. The screen oxide layer is removed when forming gates for the semiconductor device.

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Wolf et al., Silicon Processing For the VLSI Era, Lattice Press, 1990, pp. 327-332, 423-424.
Ghandi, VLSI Fabrication Principles, Wiley & Sons, 1983, pp. 353-354.

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